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An Rs-485 Transceiver In A Silicon Carbide Cmos Process, Maria Raquel Benavides Herrera
An Rs-485 Transceiver In A Silicon Carbide Cmos Process, Maria Raquel Benavides Herrera
Graduate Theses and Dissertations
This thesis presents the design, simulation and test results of a silicon carbide (SiC) RS-485 transceiver for high temperature applications. This circuit is a building block in the design and fabrication of a digital data processing and control system. Automation processes for extreme environments, remote connection to high temperature locations, deep earth drilling, and high temperature data acquisition are some of the potential applications for such a system. The transceiver was designed and developed in a 1.2 µm SiC-CMOS process by Raytheon Systems, Ltd. (UK). It has been tested with a supply voltage of 12 V and 15 V, temperatures …
A Folded Cascode Operational Amplifier With Wide-Swing Current Mirrors And High Icmr, Designed With A 1.2-Micron Silicon-Carbide Process, Austin Gattis
Electrical Engineering Undergraduate Honors Theses
This thesis describes in detail the process of designing, simulating, and creating the layout for a modified folded cascode op-amp, fabricated with silicon carbide MOSFETS. The modifications consist of using a wide-swing current mirror to help deal with output voltage issues stemming from high threshold voltages in the silicon carbide process, as well as using a modification that allows for an increased input common mode range. The folded cascode op-amp uses silicon carbide transistors, as it is intended to be used for high temperature applications, ideally in the 25 C - 300 C range. It is designed to have 25 …
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien
Graduate Theses and Dissertations
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate drive methods for these devices which address those challenges. SiC power devices present many benefits that make them suitable for next generation automotive, power utility grid, and energy management applications. High efficiency, increased power density, and reliability at high-temperatures are some of the main benefits of SiC technology. However, the many challenges associated with these devices have prevented their adoption into industry applications. The argument is made in this thesis that the gate driver is a …