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Electrical and Computer Engineering

2006

University of South Carolina

Articles 1 - 10 of 10

Full-Text Articles in Engineering

A New Class Of Miniature Embedded Inverted-F Antennas (Ifas) For 2.4 Ghz Wlan Application, Mohammed Z. Azad, Mohammod Ali Sep 2006

A New Class Of Miniature Embedded Inverted-F Antennas (Ifas) For 2.4 Ghz Wlan Application, Mohammed Z. Azad, Mohammod Ali

Faculty Publications

A new class of miniature printed embedded inverted-F antennas are proposed for operation in the 2.4-2.485 GHz wireless local-area network band. One of the proposed antennas on FR4 substrate (dielectric constant = 4.4) measures 9.2 mm by 4.1 mm and has a bandwidth of 3.5%. The peak gain of this antenna is 1.4 dBi. An overall size reduction of 70% is achieved compared to a conventional inverted-F antenna. Effects of dielectric loss tangent and material conductivity on the bandwidth and efficiency of these antennas are also investigated. Finally, two embedded antenna elements are analyzed to demonstrate the feasibility for a …

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The 1.6-Kv Algan/Gan Hfets, N. Tipirneni, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, Asif Khan Sep 2006

The 1.6-Kv Algan/Gan Hfets, N. Tipirneni, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, Asif Khan

Faculty Publications

The breakdown voltages in unpassivated nonfield-plated AlGan/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGan/GaN channel. after elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mu m. The corresponding static ON-resistance was as low as 3.4 m Omega(.)cm(2). This translates to a power device figure-of-merit V-BR(2)/R-ON = 7.5 x 10(8) V-2 . n(-1) cm(-2), which, to date, is among the best reported values for an AlGan/GaN HFET.

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A Compact Digitally Controlled Fuel Cell/Battery Hybrid Power Source, Zhenhua Jiang, Roger A. Dougal Aug 2006

A Compact Digitally Controlled Fuel Cell/Battery Hybrid Power Source, Zhenhua Jiang, Roger A. Dougal

Faculty Publications

A compact digitally controlled fuel cell/battery hybrid power source is presented in this paper. The hybrid power source composed of fuel cells and batteries provides a much higher peak power than each component alone while preserving high energy density, which is important and desirable for many modern electronic devices, through an appropriately controlled dc/dc power converter that handles the power flow shared by the fuel cell and the battery. Rather than being controlled to serve only as a voltage or current regulator, the power converter is regulated to balance the power flow to satisfy the load requirements while ensuring the …

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Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan Jul 2006

Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan

Faculty Publications

AlGaN∕GaNheterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET(C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealedOhmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaNheterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs.C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap …

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Algan/Gan/Algan Double Heterostructure For High-Power Iii-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan Jun 2006

Algan/Gan/Algan Double Heterostructure For High-Power Iii-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan

Faculty Publications

We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improved two-dimensional (2D) confinement for high-power III-N heterostructurefield-effect transistors(HFETs). The DH was grown directly on an AlN buffer over i-SiC substrate. It enables an excellent confinement of the 2D gas and also does not suffer from the parasitic channel formation as experienced in past designs grown over GaN buffer layers. Elimination of the GaN buffer modifies the strain distribution in the DH, enabling Al contents in the barrier region well over 30%. For the AlGaN/GaN/AlGaN DH design, the 2D electron gasmobility achieved was 1150 cm2/V s at …

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Digital Oxide Deposition Of Sio2 Layers For Iii-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan May 2006

Digital Oxide Deposition Of Sio2 Layers For Iii-Nitride Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

We present a digital-oxide-deposition (DOD) technique to deposit high quality SiO2dielectric layers by plasma-enhanced chemical vapor deposition using alternate pulses of silicon and oxygen precursors. The DOD procedure allows for a precise thickness control and results in extremely smooth insulating SiO2 layers. An insulating gate AlGaN∕GaNheterostructurefield-effect transistor(HFET) with 8nm thick DOD SiO2dielectric layer had a threshold voltage of −6V (only 1V higher than that of regular HFET), very low threshold voltage dispersion, and output continuous wave rf power of 15W∕mm at 55V drain bias.

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Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal Apr 2006

Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal

Faculty Publications

No abstract provided.

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Power Anomaly Effects And Costs In Low-Voltage Mobile Power Systems, Shengyi Liu, Charles H. Singer, Roger A. Dougal Apr 2006

Power Anomaly Effects And Costs In Low-Voltage Mobile Power Systems, Shengyi Liu, Charles H. Singer, Roger A. Dougal

Faculty Publications

Electric power anomalies or disturbances can disrupt the normal operation of equipment, accelerate aging, or even cause outright failures thus resulting in increased costs of maintenance and reduced system reliability. Past research on the effects caused by power anomalies has been mostly focused on industrial, commercial, or residential systems, or on power distribution equipment. A literature survey reveals that there is no comprehensive review related to low-voltage (LV) power systems and utilization equipment applicable to military combat vehicles, such as aircraft and ships. This paper summarizes the results of a new literature survey that focused on the causes, effects, and …

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Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner Jan 2006

Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner

Faculty Publications

The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …

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Miniature Circularly Polarized Rectenna With Reduced Out-Of-Band Harmonics, Mohammod Ali, Guangli Yang, Roger A. Dougal Jan 2006

Miniature Circularly Polarized Rectenna With Reduced Out-Of-Band Harmonics, Mohammod Ali, Guangli Yang, Roger A. Dougal

Faculty Publications

Wireless embedded sensors are becoming increasingly important for many safety critical applications. Sensor batteries or capacitors must be charged as needed in order to achieve high data rate communications. A miniature circularly polarized rectenna operating at 5.5 GHz is introduced which, with the help of an integrated band-reject filter, reduces out-of-band harmonic emission significantly. The rectenna has a conversion efficiency of 74% with more than 50 dB out-of-band harmonic suppression at 11 GHz.

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