Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons™

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

Series

2002

Copper

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Fdtd Modeling Of Skin Effect, Chen Wang, James L. Drewniak, Min Li, Jun Fan, James L. Knighten, Norman W. Smith, Ray Alexander, Jingyu Huang May 2002

Fdtd Modeling Of Skin Effect, Chen Wang, James L. Drewniak, Min Li, Jun Fan, James L. Knighten, Norman W. Smith, Ray Alexander, Jingyu Huang

Electrical and Computer Engineering Faculty Research & Creative Works

The data rates and clock speeds of current highspeed signals are increasing rapidly, consequently, not only the lossy nature of FR-4 but also the lossy nature of good conductors, such as copper, need to be taken into account in high-speed signal designs. In order to well predict the loss caused by both dielectric loss and skin effect loss, a suitable simulation tool is needed. A surface impedance boundary condition (SIBC) algorithm was implemented in FDTD modeling herein to accommodate the skin effect loss due to finite conductivity of good conductors. Good agreement between the FDTD result and the measurements as …

Go to article

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman Jan 2002

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …

Go to article