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Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Mehmet R. Dokmeci
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci
Ahmed A. Busnaina
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Ahmed A. Busnaina
The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Nicol E. McGruer
The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Yung Joon Jung
The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.