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Full-Text Articles in Engineering
Selective Oxidation Of Iron In Chalcopyrite For Enhanced Copper Recovery, Khojiakbar Shuxrat O'G'Li Sultonov, Shokhrukh Toshpulatovich Khojiev, Gulnoza Berdiyor Qizi Beknazarova, Malika Sayfullayevna Saidova
Selective Oxidation Of Iron In Chalcopyrite For Enhanced Copper Recovery, Khojiakbar Shuxrat O'G'Li Sultonov, Shokhrukh Toshpulatovich Khojiev, Gulnoza Berdiyor Qizi Beknazarova, Malika Sayfullayevna Saidova
Technical science and innovation
This study explores the thermodynamic feasibility of selectively oxidizing iron contained in chalcopyrite mineral while preventing the oxidation of copper sulphide, with the ultimate goal of enhancing the copper concentration in the sulphide concentrate. A redox reaction in the solid phases between chalcopyrite and copper (I) oxide was constructed and subjected to thermodynamic analysis. The research identifies a crucial temperature range of 498-598 K (225-325 °C) as the most favourable for the redox reaction. The equilibrium constants at the selected optimal temperatures, 1.152 for chalcopyrite and 1.137 for copper (I) oxide, indicate that the redox reaction adheres to the expected …
Optic Properties On Aggase2 Polycristal Fabrication, A. Harsono Soepardjo, I Dewa Made Janusetiawan
Optic Properties On Aggase2 Polycristal Fabrication, A. Harsono Soepardjo, I Dewa Made Janusetiawan
Makara Journal of Technology
Optic Properties on AgGaSe2 Polycristal Fabrication. Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, …
Quarternair Cugasete And Cuga0.5in 0.5te2 Thin Films Fabrication Using Flash Evaporation, A. Harsono Soepardjo
Quarternair Cugasete And Cuga0.5in 0.5te2 Thin Films Fabrication Using Flash Evaporation, A. Harsono Soepardjo
Makara Journal of Technology
Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation. Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 – 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were …