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Epitaxial 4h-Sic Radiation Detectors For Harsh Environment Applications, Joshua W. Kleppinger

Theses and Dissertations

Epitaxial 4H-silicon carbide (4H-SiC) is an essential semiconductor material for the development of harsh environment radiation detectors due to its excellent electrical and thermal properties and resistance to radiation damage, opening the door for a wide variety of applications in NASA space missions, nuclear safeguards, and nuclear energy. However, the low atomic numbers of its constituent atoms Si (Z = 14) and C (Z = 6) make 4H-SiC nearly transparent to most neutrally charged radiation which can only be compensated using thicker active volumes.

In this dissertation, Ni/n-4H-SiC Schottky barrier diode (SBD) radiation detectors are fabricated for the first time …