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Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Theses and Dissertations
Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley Read-Hall (ASRH) radiative (Brad) and Auger (CAug) recombination were determined at two different temperatures and four excitation powers, then analyzed for consistency and physical significance. For all of the resulting least …
Luminescence In Zno, Jin Xu
Luminescence In Zno, Jin Xu
Theses and Dissertations
As a wide band semiconductor with a large binding energy (about 60meV), ZnO is a promising candidate semiconductor material for the next generation of optoelectronic , light emission or high power and high frequency devices. In order to make electrical device from ZnO, it is necessary to investigate optical properties of ZnO.In this thesis, PL setup and the properties of ZnO are introduced briefly and the optical properties of ZnO are investigated in detail. Temperature dependence of PL spectra of ZnO are measured and analyzed. Sharp emission line of PL spectra of rare earth (RE) doped ZnO are also investigated.