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A Physics-Based Heterojunction Bipolar Transistor Model For Integrated Circuit Simulation, James A. Fellows

Theses and Dissertations

The purpose of this research effort was to derive a physics-based dc model for a Heterojunction Bipolar Transistor HBT. The dc model was then linearized to arrive at a small-signal model that accurately predicts the devices electrical behavior at microwave frequencies. This new model offers features not found in previous analytical or physics-based HBT models such as consideration of a cylindrical emitter-base geometry and is direct implementation into SPICE Simulation Program with Integrated Circuit Emphasis. The device model parameters were determined from a knowledge of the device material, geometry, and fabrication process. The model was then developed by using semiconductor …