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Full-Text Articles in Engineering
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Sherra E. Kerns
On the basis of the analysis of all the thick- film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain …
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Sherra E. Kerns
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Sherra E. Kerns
The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
The Search For Design In Electrical Engineering Education, David V. Kerns, Sherra E. Kerns, Mark Somerville, Gill Pratt, Jill Crisman
The Search For Design In Electrical Engineering Education, David V. Kerns, Sherra E. Kerns, Mark Somerville, Gill Pratt, Jill Crisman
Sherra E. Kerns
The importance of "design" in engineering education is well established and a cornerstone of most new engineering curricula as well as accreditation criteria Electrical and computer engineering (ECE) programs view many elements of design in ways similar to other engineering disciplines. However, in some respects other disciplines within engineering, such as Mechanical Engineering (ME), view design in broader terms, and perhaps gain value that electrical and computer engineering educators may miss. This paper describes how design is typically viewed in ECE programs, bow it's viewed in other engineering areas, particularly ME, and suggests some new possibilities for enhancing design education …