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Design And Optimization Of Multichip Gan Module Enabling Improved Switching Performance, Asif Imran Emon
Design And Optimization Of Multichip Gan Module Enabling Improved Switching Performance, Asif Imran Emon
Graduate Theses and Dissertations
Wide bandgap semiconductors (SiC & GaN) due to their enhanced performance and superior material properties compared to traditional silicon power devices have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed …