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Effect Of Annealing On Copper Thin Films:The Classical Size Effect And Agglomeration, Parag Gadkari

Electronic Theses and Dissertations

With continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising from surface and grain boundaries. The total resistivity of metals depends on the electron scattering due to impurities, phonons, surfaces, grain boundaries, and other …