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Electrical and Computer Engineering

Electrical and Computer Engineering Publications

2006

SAPPHIRE

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Dislocation Reduction In Gan Grown On Porous Tin Networks By Metal-Organic Vapor-Phase Epitaxy, Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, T. S. Kuan Jan 2006

Dislocation Reduction In Gan Grown On Porous Tin Networks By Metal-Organic Vapor-Phase Epitaxy, Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, T. S. Kuan

Electrical and Computer Engineering Publications

We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the …


Growth Optimization And Structural Analysis For Ferromagnetic Mn-Doped Zno Layers Deposited By Radio Frequency Magnetron Sputtering, M. Abouzaid, P. Ruterana, C. Liu, H. Morkoç Jan 2006

Growth Optimization And Structural Analysis For Ferromagnetic Mn-Doped Zno Layers Deposited By Radio Frequency Magnetron Sputtering, M. Abouzaid, P. Ruterana, C. Liu, H. Morkoç

Electrical and Computer Engineering Publications

The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetronsputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5μm Mn-doped layer towards the surface on top of a 150nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90°, putting [101¯0]and [11¯20] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed …