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Subpicosecond Time-Resolved Raman Studies Of Lo Phonons In Gan: Dependence On Photoexcited Carrier Density, K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hadis Morkoç

Electrical and Computer Engineering Publications

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from1016to2×1019cm−3 . The lifetime has been found to decrease from 2.5ps , at low density, to0.35ps , at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.