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Infrared Optical Absorbance Of Intersubband Transitions In Gan/Algan Multiple Quantum Well Structures, Qiaoying Zhou, Jiayu Chen, B. Pattada, M. O. Manasreh, Faxian Xiu, Steve Putigan, K. S. Ramaiah, Hadis Morkoç
Infrared Optical Absorbance Of Intersubband Transitions In Gan/Algan Multiple Quantum Well Structures, Qiaoying Zhou, Jiayu Chen, B. Pattada, M. O. Manasreh, Faxian Xiu, Steve Putigan, K. S. Ramaiah, Hadis Morkoç
Electrical and Computer Engineering Publications
Intersubband transitions in Si-doped molecular beam epitaxygrown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the Fourier-transform infrared optical absorption technique. Several GaN quantum well samples were grown with either AlGaN bulk or GaN/AlGaN short period superlattice barriers. The measurements were made in a waveguide configuration utilizing a facet polished at 45° to the c plane. The integrated area of the intersubband transitions in several waveguides cut from different location of the wafer was measured, from which we estimated the two-dimensional electron gas density (σ). The measured values of σ are about two orders of magnitude larger …
Contactless Electroreflectance, In The Range Of 20 K < T < 300 K, Of Freestanding Wurtzite Gan Prepared By Hydride-Vapor-Phase Epitaxy, Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, H. Morkoç
Contactless Electroreflectance, In The Range Of 20 K < T < 300 K, Of Freestanding Wurtzite Gan Prepared By Hydride-Vapor-Phase Epitaxy, Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, H. Morkoç
Electrical and Computer Engineering Publications
We have performed a detailed contactless electroreflectance study of the interband excitonic transitions on both the Ga and N faces of a 200-μm-thick freestanding hydride-vapor-phase-epitaxy grown wurtzite GaN sample with low defect concentration in the temperature range between 20 and 300 K. The transition energies of the A, B, and C excitons and broadening parameters of the A and B excitons have been determined by least-square fits to the first derivative of a Lorentzian line shape. The energy positions and separations of the excitonic transitions in the sample reveal the existence of residual strain. At 20 K the broadening parameter …