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Full-Text Articles in Engineering
Effect Of N+-Gan Subcontact Layer On 4h–Sic High-Power Photoconductive Switch, K. Zhu, S. Doğan, Y.-T. Moon, J. Leach, F. Yun, D. Johnstone, Hadis Morkoç, G. Li, B. Ganguly
Effect Of N+-Gan Subcontact Layer On 4h–Sic High-Power Photoconductive Switch, K. Zhu, S. Doğan, Y.-T. Moon, J. Leach, F. Yun, D. Johnstone, Hadis Morkoç, G. Li, B. Ganguly
Electrical and Computer Engineering Publications
High-power photoconductive semiconductor switching devices were fabricated on 4H–SiC. In order to prevent current crowding, reduce the contact resistance, and avoid contact degradation, a highly n-doped GaN subcontact layer was inserted between the contact metal and the high resistivity SiC bulk. This method led to a two orders of magnitude reduction in the on-state resistance and, similarly, the photocurrent efficiency was increased by two orders of magnitude with the GaN subcontact layer following the initial high current operation. Both dry etching and wet etching were used to remove the GaN subcontact layer in the channel area. Wet etching was found …