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Electrical and Computer Engineering
Electrical and Computer Engineering Faculty Research and Publications
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Dependence Of The Performance Of Single Photon Avalanche Diodes On The Multiplication Region Width, David A. Ramirez, Majeed M. Hayat, Mark A. Itzler
Dependence Of The Performance Of Single Photon Avalanche Diodes On The Multiplication Region Width, David A. Ramirez, Majeed M. Hayat, Mark A. Itzler
Electrical and Computer Engineering Faculty Research and Publications
The dependence of the performance of separate-absorption-multiplication (SAM) single-photon avalanche diodes (SPADs) on the width of the multiplication region is theoretically investigated. The theory is applied to SAM SPADs with InP homojunction multiplication regions and InAlAs-InP heterojunction multiplication regions. In both cases the absorber layer is InGaAs. Two scenarios for the dark counts are considered: (i) low-temperature operation, when the number of dark carriers is dominated by field-assisted mechanisms of band-to-band tunneling and tunneling through defects; and (ii) room-temperature operation, when the number of dark carriers in the multiplication region is dominated by the generation/recombination mechanism. The analysis utilizes a …