Engineering Commons^™

Faulty Behavior Of Storage Elements And Its Effects On Sequential Circuits, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana

Electrical and Computer Engineering Faculty Research & Creative Works

It is often assumed that the faults in storage elements (SEs) can be modeled as output/input stuck-at faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. Transistor-level faults in common SEs are examined here. A more accurate higher level fault model for elementary SEs that better represents the physical failures is presented. It is shown that a minimal (stuck-at) model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SEs that are not covered by the minimal fault …