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Modeling Of Intra-Cell Defects In Cmos Sram, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana
Modeling Of Intra-Cell Defects In Cmos Sram, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana
Electrical and Computer Engineering Faculty Research & Creative Works
The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified.