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Articles 1 - 9 of 9
Full-Text Articles in Engineering
Defects In Skeletal Muscle Subsarcolmmal Mitochondria In A Non-Obese Model Of Type 2 Diabetes Mellitus, Nicola Lai, China Kummitha, Charles Hoppel
Defects In Skeletal Muscle Subsarcolmmal Mitochondria In A Non-Obese Model Of Type 2 Diabetes Mellitus, Nicola Lai, China Kummitha, Charles Hoppel
Electrical & Computer Engineering Faculty Publications
Skeletal muscle resistance to insulin is related to accumulation of lipid-derived products, but it is not clear whether this accumulation is caused by skeletal muscle mitochondrial dysfunction. Diabetes and obesity are reported to have a selective effect on the function of subsarcolemmal and interfibrillar mitochondria in insulin-resistant skeletal muscle. The current study investigated the role of the subpopulations of mitochondria in the pathogenesis of insulin resistance in the absence of obesity. A non-obese spontaneous rat model of type 2 diabetes mellitus, (Goto-Kakizaki), was used to evaluate function and biochemical properties in both populations of skeletal muscle mitochondria. In subsarcolemmal mitochondria, …
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …
Perspective: The Physics, Diagnostics, And Applications Of Atmospheric Pressure Low Temperature Plasma Sources Used In Plasma Medicine, M. Laroussi
Electrical & Computer Engineering Faculty Publications
Low temperature plasmas have been used in various plasma processing applications for several decades. But it is only in the last thirty years or so that sources generating such plasmas at atmospheric pressure in reliable and stable ways have become more prevalent. First, in the late 1980s, the dielectric barrier discharge was used to generate relatively large volume diffuse plasmas at atmospheric pressure. Then, in the early 2000s, plasma jets that can launch cold plasma plumes in ambient air were developed. Extensive experimental and modeling work was carried out on both methods and much of the physics governing such sources …
Impact Of Rram Read Fluctuations On The Program-Verify Approach, David M. Nminibapiel, Dmitry Veksler, J.-H. Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
Impact Of Rram Read Fluctuations On The Program-Verify Approach, David M. Nminibapiel, Dmitry Veksler, J.-H. Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
Electrical & Computer Engineering Faculty Publications
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Aluminum multicharged ion generation from femtosecond laser ablation is studied. A Ti:sapphire laser (wavelength 800 nm, pulse width ∼100 fs, and maximum laser fluence of 7.6 J/cm2) is used. Ion yield and energy distribution of each charge state are measured. A linear relationship between the ion charge state and the equivalent acceleration energy of the individual ion species is observed and is attributed to the presence of an electric field within the plasma-vacuum boundary that accelerates the ions. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. For Al1+ and Al2+, the ion energy distributions …
Quantitative Analysis Of X-Ray Fluorescence Absorption And Emission For Thickness Determination Of Ald-Grown Metal And Oxide Nanoscaled Films, Tarek M. Abdel-Fattah, Alex Wixtrom, Larry Arias, Kai Zhang, Helmut Baumgart
Quantitative Analysis Of X-Ray Fluorescence Absorption And Emission For Thickness Determination Of Ald-Grown Metal And Oxide Nanoscaled Films, Tarek M. Abdel-Fattah, Alex Wixtrom, Larry Arias, Kai Zhang, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
This study describes the use of X-ray fluorescence spectroscopy (XRF) to determine the thickness of nanoscaled thin films of insulating oxides such as Al2O3, HfO2, and ZrO2, semiconducting oxides such as TiO2, ZnO, and metals like Pt, on silicon substrates synthesized by atomic layer deposition (ALD) technology. XRF thickness measurements were compared with the predicted layer thickness based on calculations from known ALD growth rates for each metal or metal oxide films. The ALD growth rates have been calibrated with TEM cross-sectional measurements of the resulting film thickness. The results …
Seebeck Coefficient Measurements Of Polycrystalline And Highly Ordered Metal-Organic Framework Thin Films, Xin Chen, Zhenbang Wang, Zeinab M. Hassan, Pengtao Lin, Kai Zhang, Helmut Baumgart, Engelbert Redel
Seebeck Coefficient Measurements Of Polycrystalline And Highly Ordered Metal-Organic Framework Thin Films, Xin Chen, Zhenbang Wang, Zeinab M. Hassan, Pengtao Lin, Kai Zhang, Helmut Baumgart, Engelbert Redel
Electrical & Computer Engineering Faculty Publications
In this work highly oriented Surface Anchored Metal-Organic Framework (SURMOF) films were fabricated quasi-epitaxial and were electrically characterized by Seebeck analysis and benchmarked against random polycrystalline MOF films loaded with tetracyano-quinodimethane (TCNQ) infiltration. The horizontal Seebeck coefficient of the oriented SURMOF films and the random polycrystalline MOF films parallel to the sample surface was measured and has been discussed. The isotropic random polycrystalline MOF films exhibit a high positive Seebeck coefficient of 422.32 μV/K at 350 K. However, the horizontal Seebeck coefficient of highly oriented SURMOF films fluctuates around 0 μV/K instead. Because the quasi-epitaxial oriented SURMOF films are highly …
Teaching Hands-On Cyber Defense Labs To Middle School And High School Students: Our Experience From Gencyber Camps, Peng Jiang, Xin Tian, Chunsheng Xin, Wu He
Teaching Hands-On Cyber Defense Labs To Middle School And High School Students: Our Experience From Gencyber Camps, Peng Jiang, Xin Tian, Chunsheng Xin, Wu He
Electrical & Computer Engineering Faculty Publications
With the high demand of the nation for next generation cybersecurity experts, it is important to design and provide hands-on labs for students at the K-12 level in order to increase their interest in cybersecurity and enhance their confidence in learning cybersecurity skills at the young age. This poster reports some preliminary analysis results from the 2016 GenCyber summer camp held at Old Dominion University (ODU), which is part of a nationwide grant program funded by the National Security Agency (NSA) and the National Science Foundation (NSF). This poster also demonstrates the design of three hands-on labs which have been …
Siso Output Affine Feedback Transformation Group And Its Faá Di Bruno Hopf Algebra, W. Steven Gray, Kurusch Ebrahimi-Fard
Siso Output Affine Feedback Transformation Group And Its Faá Di Bruno Hopf Algebra, W. Steven Gray, Kurusch Ebrahimi-Fard
Electrical & Computer Engineering Faculty Publications
The general goal of this paper is to identify a transformation group that can be used to describe a class of feedback interconnections involving subsystems which are modeled solely in terms of Chen-Fliess functional expansions or Fliess operators and are independent of the existence of any state space models. This interconnection, called an output affine feedback connection, is distinguished from conventional output feedback by the presence of a multiplier in an outer loop. Once this transformation group is established, three basic questions are addressed. How can this transformation group be used to provide an explicit Fliess operator representation of …