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Full-Text Articles in Engineering
Design And Fabrication Of Field-Effect Iii-V Schottky Junction Solar Cells, Amirhossein Ghods
Design And Fabrication Of Field-Effect Iii-V Schottky Junction Solar Cells, Amirhossein Ghods
Doctoral Dissertations
“A new concept of field-effect photovoltaic devices with a focus on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al0.3Ga0.7As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band regions on the top surface of the device. It should be mentioned that the bias layer is designed to …
Investigation Of Wide Bandgap Semiconductors For Room Temperature Spintronic, And Photovoltaic Applications, Vishal Saravade
Investigation Of Wide Bandgap Semiconductors For Room Temperature Spintronic, And Photovoltaic Applications, Vishal Saravade
Doctoral Dissertations
"Suitability of wide bandgap semiconductors for room temperature (RT) spintronic, and photovoltaic applications is investigated.
Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is identified. GaGdN exhibits Anomalous Hall Effect at room temperature if it contains oxygen or carbon atoms but shows Ordinary Hall Effect in their absence. The mechanism for spin and ferromagnetism in GaGdN is a combination of intrinsic, metallic conduction, and carrier-hopping mechanisms, and is activated by oxygen or carbon centers at interstitial or similar sites. A carrier-related mechanism in MOCVD-grown GaGdN at room temperature makes …