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Iii-Nitride Nanostructures: Photonics And Memory Device Applications, Barsha Jain
Iii-Nitride Nanostructures: Photonics And Memory Device Applications, Barsha Jain
Dissertations
III-nitride materials are extensively studied for various applications. Particularly, III-nitride-based light-emitting diodes (LEDs) have become the major component of the current solid-state lighting (SSL) technology. Current III-nitride-based phosphor-free white color LEDs (White LEDs) require an electron blocking layer (EBL) between the device active region and p-GaN to control the electron overflow from the active region, which has been identified as one of the primary reasons to adversely affect the hole injection process. In this dissertation, the effect of electronically coupled quantum well (QW) is investigated to reduce electron overflow in the InGaN/GaN dot-in-a-wire phosphor-free white LEDs and to improve the …
Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui
Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui
Dissertations
Applications of III-nitride nanowires are intensively explored in different emerging technologies including light-emitting diodes (LEDs), laser diodes, photodiodes, biosensors, and solar cells. The synthesis of the III-nitride nanowires by molecular beam epitaxy (MBE) is investigated with significant achievements. III-nitride nanowires can be grown on dissimilar substrates i.e., silicon with nearly dislocation free due to the effective strain relaxation. III-nitride nanowires, therefore, are perfectly suited for high performance light emitters for cost-effective fabrication of the advanced photonic-electronic integrated platforms. This dissertation addresses the design, fabrication, and characterization of III-nitride nanowire full-color micro-LED (µLED) on silicon substrates for µLED display technologies, high-efficient …