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Electrical and Computer Engineering
Department of Electrical and Computer Engineering Faculty Publications
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On The Role Of Phonon Scattering In Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark S. Lundstrom
On The Role Of Phonon Scattering In Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark S. Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
The role of phonon scattering in carbon nanotube field-effect transistors (CNTFETs) is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path (mfp) (~1μm)(~1μm). If elastic scattering with a short mfp were to exist in a CNTFET, the on current would be severely degraded due to the one-dimensional channel geometry. At high drain bias, optical phonon scattering, which has a much shorter mfp (~10nm)(~10nm), is expected to dominate, even in a short-channel CNTFET. …
Simulation Of Phonon-Assisted Band-To-Band Tunneling In Carbon Nanotube Field-Effect Transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov
Simulation Of Phonon-Assisted Band-To-Band Tunneling In Carbon Nanotube Field-Effect Transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov
Department of Electrical and Computer Engineering Faculty Publications
Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor MOSFET is simulated using the nonequilibrium Green’s functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band Landau-Zener tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage thereby increasing the off current. It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40 mV/decade despite the effect of phonon scattering
A Theoretical Investigation Of Surface Roughness Scattering In Silicon Nanowire Transistors, Jing Wang, Eric Polizzi, Avik Ghosh, Supriyo Datta, Mark S. Lundstrom
A Theoretical Investigation Of Surface Roughness Scattering In Silicon Nanowire Transistors, Jing Wang, Eric Polizzi, Avik Ghosh, Supriyo Datta, Mark S. Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
The role of phonon scattering in carbon nanotube field-effect transistors sCNTFETsd is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path smfpd s,1 mmd. If elastic scattering with a short mfp were to exist in a CNTFET, the on current would be severely degraded due to the one-dimensional channel geometry. At high drain bias, optical phonon scattering, which has a much shorter mfp s,10 nmd, is expected to dominate, even in a …