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Full-Text Articles in Engineering
Epitaxial Growth Of M-Type Ba-Hexaferrite Films On Mgo (111) || Sic (0001) With Low Ferromagnetic Resonance Linewidths, Zhaohui Chen, Aria Fan Yang, Anton Geiler, Vincent Girard Harris (1962-), C. Vittoria, Paul R. Ohodnicki, K. Y. Goh, Michael E. Mchenry, Zhuhua Cai, Trevor L. Goodrich, Katherine S. Ziemer
Epitaxial Growth Of M-Type Ba-Hexaferrite Films On Mgo (111) || Sic (0001) With Low Ferromagnetic Resonance Linewidths, Zhaohui Chen, Aria Fan Yang, Anton Geiler, Vincent Girard Harris (1962-), C. Vittoria, Paul R. Ohodnicki, K. Y. Goh, Michael E. Mchenry, Zhuhua Cai, Trevor L. Goodrich, Katherine S. Ziemer
Anton Geiler
Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe₁₂O₁₉ target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4πs) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for …
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Girard Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Dae Yoon, Tomokuza Sakai, Anton Geiler, Aria Fan Yang, Yongxue He, Katherine S. Ziemer, Nian X. Sun, C. Vittoria
Anton Geiler
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.
Tunable Fringe Magnetic Fields Induced By Converse Magnetoelectric Coupling In A Fega/Pmn-Pt Multiferroic Heterostructure, Trifon Fitchorov, Yajie Chen, Bolin Hu, Scott M. Gillette, Anton Geiler, Carmine Vittoria, Vincent G. Harris
Tunable Fringe Magnetic Fields Induced By Converse Magnetoelectric Coupling In A Fega/Pmn-Pt Multiferroic Heterostructure, Trifon Fitchorov, Yajie Chen, Bolin Hu, Scott M. Gillette, Anton Geiler, Carmine Vittoria, Vincent G. Harris
Anton Geiler
The fringe magnetic field, induced by magnetoelectric coupling in a bilayer Fe-Ga/Pb(Mg1/3Nb2/3)O3_PbTiO3 (PMN-PT) multifunctional composite, was investigated. The induced external field is characterized as having a butterfly hysteresis loop when tuned by an applied electric field. A tuning coefficient of the electrically induced fringe magnetic field is derived from the piezoelectric and magnetostrictive properties of the composite. A measured maximum tuning coefficient, 4.5 Oe/(kV cm−1), is found to agree well with theoretical prediction. This work establishes a foundation in the design of transducers based on the magnetoelectric effect.