Engineering Commons^™

Exploration Of Erasure-Coded Storage Systems For High Performance, Reliability, And Inter-Operability, Pradeep Subedi

Theses and Dissertations

With the unprecedented growth of data and the use of low commodity drives in local disk-based storage systems and remote cloud-based servers has increased the risk of data loss and an overall increase in the user perceived system latency. To guarantee high reliability, replication has been the most popular choice for decades, because of simplicity in data management. With the high volume of data being generated every day, the storage cost of replication is very high and is no longer a viable approach.

Erasure coding is another approach of adding redundancy in storage systems, which provides high reliability at a …

Electron – Phonon Interaction In Multiple Channel Gan Based Hfets: Heat Management Optimization, Romualdo A. Ferreyra

Theses and Dissertations

New power applications for managing increasingly higher power levels require that more heat be removed from the power transistor channel. Conventional treatments for heat dissipation do not take into account the conversion of excess electron energy into longitudinal optical (LO) phonons, whose associated heat is stored in the channel unless such LO phonons decay into longitudinal acoustic (LA) phonons via a Ridley path. A two dimensional electron gas (2DEG) density of ~5×10¹²cm^-2 in the channel results in a strong plasmon–LO phonon coupling (resonance) and a minimum LO phonon lifetime is experimentally observed, implying fast heat removal from …

Low Dislocation Density Gallium Nitride Templates And Their Device Applications, Jinqiao Xie

Theses and Dissertations

The unique properties, such as large direct bandgap, excellent thermal stability, high μH × ns, of III-nitrides make them ideal candidates for both optoelectronic and high-speed electronic devices. In the past decades, great success has been achieved in commercialization of GaN based light emitting diodes (LEDs) and laser diodes (LDs). However, due to the lack of native substrates, thin films grown on sapphire or SiC substrates have high defect densities that degrade the device performance and reliability. Conventional epitaxy lateral overgrowth (ELO) can reduce dislocation densities down to ∼10-6 cm-2 in the lateral growth area, but requires ex situ photolithography …