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Electron Mobility In Ingan Channel Heterostructure Field Effect Transistor Structures With Different Barriers, J. Xie, J. H. Leach, X. Ni, M. Wu, R. Shimada, Ü. Özgür, Hadis Morkoç

Electrical and Computer Engineering Publications

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN∕InGaNHFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during …