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Observation Of Electronic Raman Scattering From Mg-Doped Wurtzite Gan, K. T. Tsen, C. Koch, Y. Chen, Hadis Morkoç, J. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering Publications

Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm−1)observed at around 841 cm−1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.