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Luminescence Properties Of Defects In Gan, Michael A. Reshchikov, Hadis Morkoç
Luminescence Properties Of Defects In Gan, Michael A. Reshchikov, Hadis Morkoç
Electrical and Computer Engineering Publications
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these …
Increased Carrier Lifetimes In Gan Epitaxial Films Grown Using Sin And Tin Porous Network Layers, Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt
Increased Carrier Lifetimes In Gan Epitaxial Films Grown Using Sin And Tin Porous Network Layers, Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt
Electrical and Computer Engineering Publications
Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on SiN and TiN porous network templates. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are increased with the inclusion of SiN and TiN layers. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200μm-thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (101¯2) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct …