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Growth And Characterization Of Sic Epitaxial Layers On Si- And C-Face 4h Sic Substrates By Chemical-Vapor Deposition, Kodigala Subba Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-Biyikli
Growth And Characterization Of Sic Epitaxial Layers On Si- And C-Face 4h Sic Substrates By Chemical-Vapor Deposition, Kodigala Subba Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-Biyikli
Electrical and Computer Engineering Publications
High-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C- and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defects. Atomic force microscopy analysis showed dramatic differences between the surfaces of SiC epilayers grown on C and Si faces. There was a significant step bunching in the SiC grown on Si-face substrates. Current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS) measurements were carried out on the Schottky junctions to analyze the junction characteristics. The Schottky junctions on C-face SiC showed larger barrier heights …