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Investigation Of The Effect Of Process Parameters By Taguchi Method On Structural And Electrical Properties Of Rf Magnetron Sputtered Sio2 & Psi On Si Substrate, Sajid Mahfuz Uchayash
Investigation Of The Effect Of Process Parameters By Taguchi Method On Structural And Electrical Properties Of Rf Magnetron Sputtered Sio2 & Psi On Si Substrate, Sajid Mahfuz Uchayash
Theses and Dissertations
In this work, Taguchi Signal-to-noise (S/N) analysis was applied to investigate the effect of varying three process parameters, namely- sputtering power, working pressure and Ar gas flow rate on the surface, morphological and electrical properties of the RF sputtered SiO2 and Boron doped pSi over Si substrate. The contribution of a particular process parameter on these properties was also inspected by applying Analysis of Variance (ANOVA). SiO2 and pSi thin films were fabricated over Si substrate using RF magnetron sputtering system. Three sets of inputs for the three mentioned process parameters were chosen for sputtering SiO2 and pSi thin films. …
Characterization Of The Rf Magnetron Sputtered P-Si & N-Si On Si Substrate And Effect Of Process Parameters On Their Structural & Electrical Properties, Prosanto Biswas
Characterization Of The Rf Magnetron Sputtered P-Si & N-Si On Si Substrate And Effect Of Process Parameters On Their Structural & Electrical Properties, Prosanto Biswas
Theses and Dissertations
In our work, we applied Taguchi Signal-to-noise (SNR) analysis to investigate the effect of varying three process parameters, namely- sputtering power, working pressure, and Ar gas flow rate on the surface and morphological properties of the RF sputtered p-Si and n-Si on Si substrate. We also inspected the contribution of process parameters on those properties by applying Analysis of Variance (ANOVA). Characteristics of thin films fabricated by RF magnetron sputtering vary with the recipes. Process parameters such as power, pressure, process gas flow rate, substrate temperature, and target to substrate distance determine the quality of the thin films. Some of …