Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

University of South Carolina

Electrical Engineering

Articles 1 - 4 of 4

Full-Text Articles in Engineering

Thin Film Based Biocompatible Sensors For Physiological Monitoring, Yihao Zhu May 2015

Thin Film Based Biocompatible Sensors For Physiological Monitoring, Yihao Zhu

Theses and Dissertations

The development and evolution of physiological sensors, from wearable to implantable, has enabled long term continuous physiological monitoring, making possible for the out-of-clinic treatment and management of many chronic illnesses, mental health issues and post-surgery recovery. This technology advance is gradually changing the definition of health care and the way it is delivered, from clinic/emergency room to patient’s own environment. In this dissertation, three general types of sensors have been proposed for physiological monitoring of blood pressure, oxygen content and electrolyte ion concentration level in human body, respectively. The study proved the device concepts and shows promising results with the …


Defect Characterization Of 4h-Sic By Deep Level Transient Spectroscopy (Dlts) And Influence Of Defects On Device Performance, Mohammad Abdul Mannan Jan 2015

Defect Characterization Of 4h-Sic By Deep Level Transient Spectroscopy (Dlts) And Influence Of Defects On Device Performance, Mohammad Abdul Mannan

Theses and Dissertations

Silicon carbide (SiC) is one of the key materials for high power opto-electronic devices due to its superior material properties over conventional semiconductors (e.g., Si, Ge, GaAs, etc). SiC is also very stable and a highly suitable material for radiation detection at room temperature and above. The availability of detector grade single crystalline bulk SiC is limited by the existing crystal growth techniques which introduce extended and microscopic crystallographic defects during the growth process. Recently, SiC based high-resolution semiconductor detectors for ionizing radiation have attracted world-wide attention due to the availability of high resistive, highly crystalline epitaxial layers with very …


Characterization Of The 5 Ghz Elevator Shaft Channel, Ruoyu Sun, David W. Matolak Oct 2013

Characterization Of The 5 Ghz Elevator Shaft Channel, Ruoyu Sun, David W. Matolak

Faculty Publications

In this paper we provide channel characterization results for the elevator shaft channel in the 5-GHz band, based upon measurements conducted in four buildings. This channel is of interest for several applications, including WiFi and public safety. Although several authors have provided elevator shaft channel characteristics for lower-frequency bands (255-MHz, 900-MHz, 1.9-GHz), to our knowledge this is the first work that addresses the 5-GHz band. Moreover, prior work has not thoroughly addressed channel characteristics when the elevator car is in motion, whereas here we provide measurement and modeling results for this dynamic condition. Our measurements were of power delay profiles, …


Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh Jan 2005

Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh

Faculty Publications

The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.