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Algan/Gan/Algan Double Heterostructure For High-Power Iii-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan
Algan/Gan/Algan Double Heterostructure For High-Power Iii-N Field-Effect Transistors, C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan
Faculty Publications
We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improved two-dimensional (2D) confinement for high-power III-N heterostructurefield-effect transistors(HFETs). The DH was grown directly on an AlN buffer over i-SiC substrate. It enables an excellent confinement of the 2D gas and also does not suffer from the parasitic channel formation as experienced in past designs grown over GaN buffer layers. Elimination of the GaN buffer modifies the strain distribution in the DH, enabling Al contents in the barrier region well over 30%. For the AlGaN/GaN/AlGaN DH design, the 2D electron gasmobility achieved was 1150 cm2/V s at …
Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan
Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan
Faculty Publications
We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission.