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Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Faculty Publications
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …