Engineering Commons^™

High Resolution Radiation Detectors Based On 4h-Sic N-Type Epitaxial Layers And Pixilated Cdznte Single Crystal Devices, Cihan Oner

Theses and Dissertations

Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high breakdown electric field, high carrier saturation drift velocity, and large displacement energy making it a suitable candidate for replacing conventional radiation detectors based on Si, Ge, CdTe, and CdZnTe (CZT). In this dissertation, fabrication and characterization of high-resolution Schottky barrier detectors for alpha particles using 20 µm thick n-type 4H-SiC epitaxial layers are reported. Schottky barriers were obtained by depositing circular nickel contacts of ~10 mm2 area.

Room temperature current-voltage (I-V) measurements revealed Schottky barrier heights of the order of 1.7 eV, ideality factor of ~1.1, …

Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna

Theses and Dissertations

In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials …