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High Resolution Radiation Detectors Based On 4h-Sic N-Type Epitaxial Layers And Pixilated Cdznte Single Crystal Devices, Cihan Oner
Theses and Dissertations
Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high breakdown electric field, high carrier saturation drift velocity, and large displacement energy making it a suitable candidate for replacing conventional radiation detectors based on Si, Ge, CdTe, and CdZnTe (CZT). In this dissertation, fabrication and characterization of high-resolution Schottky barrier detectors for alpha particles using 20 µm thick n-type 4H-SiC epitaxial layers are reported. Schottky barriers were obtained by depositing circular nickel contacts of ~10 mm2 area.
Room temperature current-voltage (I-V) measurements revealed Schottky barrier heights of the order of 1.7 eV, ideality factor of ~1.1, …
Study Of 4h-Sic And Alxga1-Xn Based Heterojunction Devices For Ultraviolet Detection Applications, Venkata Surya Naga Raju Chava
Study Of 4h-Sic And Alxga1-Xn Based Heterojunction Devices For Ultraviolet Detection Applications, Venkata Surya Naga Raju Chava
Theses and Dissertations
Ultraviolet (UV) detectors are important for their applications in flame detection, furnace gas control systems, plume monitoring etc. Due to their wide band-gap, 4H-SiC (Eg=3.26eV) and III-V semiconductors such as GaN (Eg=3.4eV), AlxGa1-xN (Eg=3.4eV to 6.2eV) etc., are excellent candidates for visible(��cut-0ff=400nm) and solar blind(��cut-0ff=290nm) UV detectors. Conventional SiC UV detectors suffer from poor UV responsivities due to reflection/absorption/transmission losses caused by the metal electrodes used in those detectors.
In the first part, a novel bipolar transistor with epitaxial graphene(EG)/p-SiC (30μm)/n+-SiC substrate was fabricated and characterized. The 2-3 ML thick, transparent and conducting, EG used in this work was grown …