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High Resolution Radiation Detectors Based On 4h-Sic N-Type Epitaxial Layers And Pixilated Cdznte Single Crystal Devices, Cihan Oner
Theses and Dissertations
Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high breakdown electric field, high carrier saturation drift velocity, and large displacement energy making it a suitable candidate for replacing conventional radiation detectors based on Si, Ge, CdTe, and CdZnTe (CZT). In this dissertation, fabrication and characterization of high-resolution Schottky barrier detectors for alpha particles using 20 µm thick n-type 4H-SiC epitaxial layers are reported. Schottky barriers were obtained by depositing circular nickel contacts of ~10 mm2 area.
Room temperature current-voltage (I-V) measurements revealed Schottky barrier heights of the order of 1.7 eV, ideality factor of ~1.1, …