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Influence Of Defects In Epitaxial Graphene Towards Material Growth And Device Performances, Shamaita Shithi Shetu

Theses and Dissertations

Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has received significant interest by the scientific community due to its unique electrical, optical and mechanical properties. A promising route to the synthesis of large-area graphene, is epitaxial graphene formed by sublimation of silicon atoms from Silicon carbide at elevated temperatures (>1200oC). Although the electronic and mechanical properties of graphene with perfect atomic lattice are outstanding, the structural defects, which may appear during graphene growth, can influence the growth mechanism and material properties. However, deviations from perfection, i.e. introducing dopants in semiconductors often considered …