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Full-Text Articles in Engineering
Direct Solution Of Current Density Induced On A Rough Surface By Forward Propagating Waves, Ramakrishna Janaswamy
Direct Solution Of Current Density Induced On A Rough Surface By Forward Propagating Waves, Ramakrishna Janaswamy
Ramakrishna Janaswamy
A new Volterra integral equation of the second kind with square integrable kernel is derived for paraxial propagation of radiowaves over a gently varying, perfectly conducting rough surface. The integral equation is solved exactly in terms of a infinite series and the necessary and sufficient conditions for the solution to exist and converge are established. Super exponential convergence of the Neumann series for arbitrary surface slope is established through asymptotic analysis. Expressions are derived for the determination of the number of terms needed to achieve a given accuracy, the latter depending on the parameters of the rough surface, the frequency …
Effect Of Voltage Polarity And Amplitude On Electroforming Of Tio2 Based Memristive Devices, Hao Jiang, Qiangfei Xia
Effect Of Voltage Polarity And Amplitude On Electroforming Of Tio2 Based Memristive Devices, Hao Jiang, Qiangfei Xia
Qiangfei Xia
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results.
Effect Of Voltage Polarity And Amplitude On Electroforming Of Tio2 Based Memristive Devices, Hao Jiang, Qiangfei Xia
Effect Of Voltage Polarity And Amplitude On Electroforming Of Tio2 Based Memristive Devices, Hao Jiang, Qiangfei Xia
Qiangfei Xia
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results.
Cross Point Arrays Of 8 Nm × 8 Nm Memristive Devices Fabricated With Nanoimprint Lithography, Shuang Pi, Peng Lin, Qiangfei Xia
Cross Point Arrays Of 8 Nm × 8 Nm Memristive Devices Fabricated With Nanoimprint Lithography, Shuang Pi, Peng Lin, Qiangfei Xia
Qiangfei Xia
Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 × 8 nm2 cross point memristive devices using wet chemical etching and nanoimprint lithography. The devices exhibited nonvolatile bipolar switching with extreme low programming current of 600 pA. The devices also exhibited fast switching speed and improved uniformity and promising endurance and data retention. This work opens the opportunities for memristive devices in the next generation ultrahigh-density data storage and low-power high-speed unconventional computing.
Low Voltage Resistive Switching Devices Based On Chemically Produced Silicon Oxide, Can Li, Hao Jiang, Qiangfei Xia
Low Voltage Resistive Switching Devices Based On Chemically Produced Silicon Oxide, Can Li, Hao Jiang, Qiangfei Xia
Qiangfei Xia
We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices.
Mold Cleaning With Polydimethylsiloxane (Pdms) For Nanoimprint Lithography, Peng Lin, Shuang Pi, Jiang Jiang, Qiangfei Xia
Mold Cleaning With Polydimethylsiloxane (Pdms) For Nanoimprint Lithography, Peng Lin, Shuang Pi, Jiang Jiang, Qiangfei Xia
Qiangfei Xia
We present a simple and effective mold cleaning method for nanoimprint lithography. Polydimethylsiloxane (PDMS) prepolymer is spin-coated onto a contaminated imprint mold, thermally cured in an ambient environment, and then peeled off afterwards. Contaminants of 100 s μm to sub-50 nm sizes are effectively cleaned within one cycle. During the cleaning process, a very thin PDMS film (1–2 nm) is uniformly coated onto the mold surface, serving as a protection and anti-sticking layer.