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Full-Text Articles in Engineering
Charging-Induced Asymmetry In Molecular Conductors, Eric Polizzi, S. Datta, A. Ghosh, M. Paullson, F. Zahhid
Charging-Induced Asymmetry In Molecular Conductors, Eric Polizzi, S. Datta, A. Ghosh, M. Paullson, F. Zahhid
Eric Polizzi
We investigate the origin of asymmetry in various measured current-voltage (I-V) characteristics of molecules with no inherent spatial asymmetry, with particular focus on a recent break junction measurement. We argue that such asymmetry arises due to unequal coupling with the contacts and a consequent difference in charging effects, which can only be captured in a self-consistent model for molecular conduction. The direction of the asymmetry depends on the sign of the majority carriers in the molecule. For conduction through highest occupied molecular orbitals (i.e., HOMO or p-type conduction), the current is smaller for positive voltage on the stronger contact, while …
A Three-Dimensional Quantum Simulation Of Silicon Nanowire Transistors With The Effective Mass Approximation, Eric Polizzi, J. Wang, M. Lundstrom
A Three-Dimensional Quantum Simulation Of Silicon Nanowire Transistors With The Effective Mass Approximation, Eric Polizzi, J. Wang, M. Lundstrom
Eric Polizzi
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional (3D) quantum mechanical simulation approach to treat various SNWTs within the effective-mass approximation. We begin by assuming ballistic transport, which gives the upper performance limit of the devices. The use of a mode space approach (either coupled or uncoupled) produces high computational efficiency that makes our 3D quantum simulator practical for extensive device simulation and design. Scattering in SNWTs is then treated by …