Engineering Commons^™

Phonon-Energy-Coupling-Enhancement Effect And Its Applications, Pang-Leen Ong

University of Kentucky Doctoral Dissertations

Silicon Oxide/Oxynitride (SiO₂/SiON) has been the mainstream material used for gate dielectric for MOS transistors for the past 30 years. The aggressive scaling of the feature size of MOS transistor has limited the ability of SiO₂/SiON to work effectively as the gate dielectric to modulate the conduction of current of MOS transistors due to excess leakage current dominated by direct quantum tunneling. Due to this constraint, alternative gate dielectric/high-k is being employed to reduce the leakage current in order to maintain the rate of scaling of MOS transistors. However, the cost involved in the implementation of …