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High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman

Graduate Theses and Dissertations

Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.

This dissertation work aims to explore the possibilities in high temperature …