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Electrical and Computer Engineering

Selected Works

Nian X. Sun

2012

Thin films

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria Apr 2012

Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria

Nian X. Sun

Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.


Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris Apr 2012

Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris

Nian X. Sun

The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.