Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Matteo Rinaldi
Aluminum Nitride based piezoelectric microelectromechanical systems (MEMS) technology has the potential to develop a fully integrated radio frequency (RF) platform that satisfies the requirements of next-generation communication standards: reconfigurability, miniaturization, and low power consumption. Here we report on the recent developments of this AlN thin-film based technology, namely resonators, filters, oscillators and switches. These examples highlight how MEMS will enable the mass manufacturing of reconfigurable RF front-ends.
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Matteo Rinaldi
This paper reports on the first demonstration of a reconfigurable complementary-metal-oxide-semiconductor (CMOS) oscillator based on microelectromechanical system (MEMS) resonators operating at four different frequencies (268, 483, 690, and 785 MHz). A bank of multifrequency switchable AlN contour-mode MEMS resonators was connected to a single CMOS oscillator circuit that can be configured to selectively operate in four different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the four different frequencies of operation, showing values between −94 and −70 dBc/Hz at a 1-kHz offset and PN floor values as low as −165 …