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Donor Complex Formation Due To A High-Dose Ge Implant Into Si, Ashawant Gupta, M. Mahmudur Rahman, Jianmin Qiao, Cary Y. Yang
Donor Complex Formation Due To A High-Dose Ge Implant Into Si, Ashawant Gupta, M. Mahmudur Rahman, Jianmin Qiao, Cary Y. Yang
Electrical and Computer Engineering
To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross‐sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. …
Determination Of Density Of Trap States At Y2O3-Stabilized Zro2/Si Interface Of Yba2Cu3O7-Δ/Y2O3-Stabilized Zro2/Si Capacitors, Jianmin Qiao, Kuohsu Wang, Cary Y. Yang
Determination Of Density Of Trap States At Y2O3-Stabilized Zro2/Si Interface Of Yba2Cu3O7-Δ/Y2O3-Stabilized Zro2/Si Capacitors, Jianmin Qiao, Kuohsu Wang, Cary Y. Yang
Electrical and Computer Engineering
Yba2Cu3O7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor‐insulator‐semiconductor capacitors are characterized with current‐voltage and capacitance‐voltage (C‐V) measurements at different temperatures between 223 and 80 K. As a result of ‘‘freezing’’ of mobile ions in YSZ, effects of trapped charge at the YSZ/Si interface dominate the device electrical properties at superconducting temperatures. Density of interface states and its temperature dependence are determined using a modified high frequency C‐V method, in which the temperature dependences of band gap, Fermi level, and active dopant and intrinsic carrier concentrations are considered. At superconducting temperatures, e.g., 80 K, the interface state density within …