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Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck

Birck and NCN Publications

observed, in contrast to recent reports for single QDJOURNAL OF APPLIED PHYSICS 109, 104510 (2011)
The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice …