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Statistical Modeling And Simulation Of Variability And Reliability Of Cmos Technology, Khaled Hassan Md

Open Access Dissertations

The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage current, and faster switching speed. However, this transition in technology roadmap brought about new failure mechanisms such as Positive Bias Temperature Instability and Stress Induced Leakage Current. In addition, the relentless downscaling of devices to keep up with Moore's law has significantly increased the time-zero variability caused by Random Dopant Fluctuation, Mean Gate Length Deviation, and Line Edge Roughness. Because of their possible correlation with time dependent aging effects, the quantification of reliability has become more complex than ever. To that effect, we propose a framework …