Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

Old Dominion University

Infrared

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Probing The Wave Nature Of Light-Matter Interaction, D. E. Boone, C. H. Jackson, A. T. Swecker, J. S. Hergenrather, K. S. Wenger, O. Kokhan, Balša Terzić, I. Melnikov, I. N. Ivanov, E. C. Stevens, G. Scarel Jan 2018

Probing The Wave Nature Of Light-Matter Interaction, D. E. Boone, C. H. Jackson, A. T. Swecker, J. S. Hergenrather, K. S. Wenger, O. Kokhan, Balša Terzić, I. Melnikov, I. N. Ivanov, E. C. Stevens, G. Scarel

Physics Faculty Publications

The wave-particle duality of light is a controversial topic in modern physics. In this context, this work highlights the ability of the wave-nature of light on its own to account for the conservation of energy in light-matter interaction. Two simple fundamental properties of light as wave are involved: its period and its power P. The power P depends only on the amplitude of the wave’s electric and magnetic fields (Poynting’s vector), and can easily be measured with a power sensor for visible and infrared lasers. The advantage of such a wave-based approach is that it unveils unexpected effects of light’s …


Quantum Dot Infrared Photodetector Fabricated By Pulsed Laser Deposition Technique, Mohammed Hegazy, Tamer Refaat, Nurul Abedin, Hani Elsayed-Ali Jan 2006

Quantum Dot Infrared Photodetector Fabricated By Pulsed Laser Deposition Technique, Mohammed Hegazy, Tamer Refaat, Nurul Abedin, Hani Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Pulsed laser deposition is used to fabricate multilayered Ge quantum-dot photodetector on Si(100). Growth was studied by reflection high-energy electron diffraction and atomic force microscopy. The difference in the current values in dark and illumination conditions was used to measure the device sensitivity to radiation. Spectral responsivity measurements reveal a peak around 2 μm, with responsity that increases three orders of magnitude as bias increases from 0.5 to 3.5 V.