Engineering Commons^™

Preparation And Surface Studies Of Negative Electron Affinity Semiconductors Photocathodes, Khaled A. Elamrawi

Electrical & Computer Engineering Theses & Dissertations

Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is important for applications such as photomultipliers, image intensifiers, electron beam lithography, electron microscopy, and polarized electron sources. The surface cleanliness of the III-V semiconductor photocathode is crucial in obtaining high photosensitivity.

GaAs(100) and InP(100) photocathodes are prepared by atomic hydrogen cleaning. The cleaning effect on the photocathode performance is discussed. The surface degradation mechanisms which reduce the photocathode lifetime are presented. The photocathode surface cleanliness, structure, and morphology are studied using reflection high-energy electron diffraction (RHEED).

Quantum efficiencies of ∼14% and 8% are obtained for GaAs and InP, …

Influence Of Processing Techniques On Copper Deep Levels Formation And On Photoconductivity In Silicon Doped Gallium Arsenide, Lucy M. Thomas

Electrical & Computer Engineering Theses & Dissertations

Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studied. Copper compensated silicon doped gallium arsenide (GaAs:Si:Cu) is used as switch material for bulk optically controlled semiconductor switch, and on-state photoconductivity of the switch is primarily due to the properties of the copper deep levels introduced in the material during diffusion. Gallium arsenide being a compound semiconductor, presence of vacancies and defects make the study of diffusion a complex process. The objective of the current research is twofold: a) to study the influence of diffusion conditions and processing techniques on copper deep level formation in silicon …

Experimental Studies Of Bulk Optically Controlled Gaas Switches Utilizing Fast Infrared Quenching, Michael S. Mazzola

Electrical & Computer Engineering Theses & Dissertations

This dissertation describes some of the properties of copper-compensated, silicon-doped GaAs (Cu:Si:GaAs) with the purpose of demonstrating the feasibility of the Bulk Optically Controlled Switch (BOSS) concept. The BOSS concept involves the excitation of electrons or holes from selected deep centers in the band gap of a bulk Cu:Si:GaAs photoconductor. The conductivity of the Cu:Si:GaAs crystal can be increased or decreased on command by irradiating the crystal with laser light of different wavelengths in the infrared. Photoconductivities as large as 1 (Ω cm^)-1 were measured to persist for microseconds after illumination by a 7 ns laser pulse with wavelength …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm² were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.