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Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In₂S₃ containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In₂S₃ thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In₂S_{3 …}