Engineering Commons^™

Ensemble Monte Carlo Based Simulation Analysis Of Gan Hemts For High-Power Microwave Device Applications, Tao Li

Electrical & Computer Engineering Theses & Dissertations

The high electron mobility transistors (HEMTs) fabricated using wide-bandgap semiconductors show promise as high-gain, low-noise devices with superior frequency response. The structure and operation principle of HEMT are first briefly discussed. The distinguishing and unique properties of GaN are reviewed and compared with those of GaAs. Calculations of the electronic mobility and drift velocity have been carried out for bulk GaN based on a Monte Carlo approach, which serves as a validity check for the simulation model.

By taking account of polarization effects, degeneracy and interface roughness scattering, important microwave performance measures such as the dynamic range, harmonic distortion and …