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Full-Text Articles in Engineering
Microscopic Analysis For Water Stressed By High Electric Fields In The Prebreakdown Regime, R. P. Joshi, J. Qian, K. H. Schoenbach, E. Schamiloglu
Microscopic Analysis For Water Stressed By High Electric Fields In The Prebreakdown Regime, R. P. Joshi, J. Qian, K. H. Schoenbach, E. Schamiloglu
Bioelectrics Publications
Analysis of the electrical double layer at the electrode-water interface for voltages close to the breakdown point has been carried out based on a static, Monte Carlo approach. It is shown that strong dipole realignment, ion-ion correlation, and finite-size effects can greatly modify the electric fields and local permittivity (hence, leading to optical structure) at the electrode interface. Dramatic enhancements of Schottky injection, providing a source for electronic controlled breakdown, are possible. It is also shown that large pressures associated with the Maxwell stress tensor would be created at the electrode boundaries. Our results depend on the ionic density, and …
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Bioelectrics Publications
We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.
Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer
Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer
Bioelectrics Publications
Experimental observations of the energy‐dependent electron‐beam penetration in type II‐A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 μm sample. It is found that over the 30–180 keV range, the energy dependence of the penetration depth and total path length exhibits a power‐law relation. Monte Carlo simulations have also been performed to investigate the excess carrier‐generation profiles within diamond for a set of …
A Model Of Dc Glow Discharges With Abnormal Cathode Fall, Karl H. Schoenbach, Hao Chen, G. Schaefer
A Model Of Dc Glow Discharges With Abnormal Cathode Fall, Karl H. Schoenbach, Hao Chen, G. Schaefer
Bioelectrics Publications
A model for an abnormal glow discharge, including a self‐consistent analysis of the cathode fall, was developed. It combines microscopic particle simulation by means of Monte Carlo methods with a fluid model of the gas discharge. The model allows calculations of the steady‐state electrical field distribution, the charged‐particle densities, and the current densities along the axis of the discharge. The model was used to simulate a glow discharge in 80% He and 20% SF6 at a pressure of 8 Torr with a current density of 1 A/cm2. The computed discharge voltage agrees well with measured values. The …